date-created: '2011-09-12'
date-updated: '2026-10-21'
manifest-author:
    name: Appropedia
    email: admin@appropedia.org
title: 'Semiconductor recycling plant case study of InGaN photovoltaic manufacturing'
description: 'The primary method for deposition of InGaN is Metal-organic Chemical Vapor Deposition (MOCVD), a form of chemical vapor deposition (CVD), pictorially discribed in Figure 1. This method creates layers of material with a thickness ranging between 15-60nm. The epitaxial layer is formed by pyrolysis of chemicals such as trimethylgallium (TMG), triethylgallium (TEG), and trimethylindium (TMI) on GaN or sapphire substrates. Using sapphire substrates can cause complications in determining index of refraction through spectroscopic ellipsometry due to its transparency. In these situations GaN substrates are preferable.'
keywords:
    - 'industrial ecology'
    - InGaN
    - Semiconductor
    - photovoltaics
    - recycling
    - 'solar cells'
    - Energy
    - 'Energy efficiency'
    - 'Environmental philosophy'
    - Industry
    - Sustainability
    - 'Waste management'
project-link: 'https://www.appropedia.org/Semiconductor_recycling_plant_case_study_of_InGaN_photovoltaic_manufacturing'
contact:
    name: 'User:Mlmulder'
    social:
        platform: Appropedia
        user-handle: 'User:Mlmulder'
version: 204
made: false
image: 'https://www.appropedia.org/w/images/0/08/CVD.jpg'
license:
    documentation: CC-BY-SA-3.0
licensor:
    name: 'User:Mlmulder'
    affliation: 'Category:Michigan Technological University'
    contact: 'https://www.appropedia.org/User:Mlmulder'
documentation-home: 'https://www.appropedia.org/Semiconductor_recycling_plant_case_study_of_InGaN_photovoltaic_manufacturing'
documentation-language: en