This protocol is for wafer cleaning. Wafer no matter made of silicon or sapphire should be cleaned to remove chemical residuals and other interface defects before deposition.
Cleaning procedures[edit | edit source]
- Materials:
a.Equipment
- 50ml empty beaker * 6
- stainless tweezers *2, Teflon wafer holders
- Thermometer(0-200C or above)
- Ultrasonic bath with heaters
b.Chemicals
- 69% HNO3 36% HCl, methanol, toluene, DI water
c.Engineering controls:
- Conduct procedure in ventilated fume hood.
- Work area must contain an eye wash and safety shower with unobstructed asscess
d.Personal protective equipment:
- Trionic gloves on top of nitrile gloves, apron, goggles, acid sleeves, and face-shield
- Procedures:
a.Prepare the following solutions 30ml each in 200ml beaker
- 1.Toluene
- 2.Methanol*2
- 3.DI water
- 4.HNO3+HCl (1:3)
b.Procedures developed for cleaning
- 1.Toluene 100C 15min in ultrasonic bath
- 2.Methanol rinse
- 3.Methanol 100C 5min in ultrasonic bath
- 4.DI water rinse and N2 flow
- 5.68% HNO3 : 36% HCl = 1:3 130C 15min.
- 6.DI water rinse and N2 flow
